Getting transition metal hafnium dioxide based memristor and its research

Author: Zaza Chubinidze
Keywords: memristor, hafnium diozide, magnetron spttering, oxigen vacancy
Annotation:

Annotation Here is reviewed how we have worked out computer programs, measured parameters and computerized the results, which are needed for research in order to get the active layer memristor of hafnium oxide. The main reason of computerizing was to study electro-physical parameters of hafnium oxide of the memristor. In order to set optimal technological processes, programming was realized in the modern dataflow LabVIEW programming. There are resolved various basic tasks, such as creating of X-ray diffraction (XRD) spectrum analyzer recorder for different active layers, measuring characteristics of capacity-voltage and current-voltage hardwares controlled programs in order to get the memristor. With the magnetron sputtering in the different partial pressures of oxygen and argon spheres, we have gotten hafnium oxides. For the separate parts of the hafnium oxide, there was carried out X-Ray structural analysis and measured volt-farad features, after that, there was created structure of the memristor and then memristor was measured its current-voltage characteristics . There was summarized results after appropriate measurements, and we came to the conclusions, that the received memristor meets the demands completely.

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