Research and development of transition metallic oxides

The main element of micro and nanocrystalline devices and structures is the thin dielectric, with particular requests. It must be: thin, Undefined, with large dielectric penetration and breakthrough voltage, etc. These conditions are most likely to meet transitional metallic oxides, including hafnium oxide. The modern technology of getting oxides needs a high temperature process, which leads to the occurrence of defects and reduction of break-up voltage. In following thesis is discussed the low-temperature process of formation Hafnium oxide, In technological process is used plasma anodation technology stimulated by ultra violet beam. During this process electro-physical and dielectric parameters of oxide films are improved. The objective is to take into account the content of the individual technological processes. The goal is set and Content analysis of individual technological processes is made. The kinetics of making the film is considered and its parameters are measured. it is shown that oxide films derived from stimulated plasma anodic technology can be used in the production of micro and nano electronic equipments.